Thomas Schenkel
Formation of quantum computer test structures in silicon and diamond by ion implantation with scanning probe alignment
T. Schenkel
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
The development of solid state quantum computer architectures with spin qubits requires placement and integration of single atoms into device structures. Examples of single atom based qubits are donor electron and nuclear spins in silicon and color centers such as the nitrogen-vacancy center in diamond. Ion implantation with scanning probe alignment integrates the imaging and alignment functions of an in situ scanning force microscope with energetic ion beams and enables the placement of single ions with high spatial resolution [1]. The aperture in the scanning probe tip defines the effective beam spot size and functions as a dynamic shadow mask for the ion beam. We report on studies of single ion doping of transistors and the formation of NV-centers using this method. Transistors were formed in isotopically enriched 28-Si using planar (for micron scale devices) and FinFet (for 100 nm scale devices) geometries and were designed for donor spin state readout through spin dependent transport [2, 3]. Detection of changes in transistor currents following the impact of single ions enables deterministic doping [4]. We discuss resolution limiting factors and prospects for ultimate scaling of this approach to sub-10 nm single ion placement and the formation of integrated single atom devices in silicon and diamond [5].
Acknowledgements:
This work was supported by the National Security Agency under contract number 09-0000030874, and by the Director, Office of Science, of the Department of Energy under Contract No. DE-AC02-05CH11231.
References
[1] A. Persaud, S. J. Park, J. A. Liddle, J. Bokor, I. W. Rangelow, and T. Schenkel, NanoLetters 5, 1087 (2005)
[2] C. C. Lo, J. Bokor, T. Schenkel, J. He, A. M. Tyryshkin, and S.A. Lyon, Appl. Phys. Lett. 91, 242106 (2007)
[3] M. Sarovar, K. C. Young, T. Schenkel, K. B. Whaley, Phys. Rev. B 78, 245302 (2008)
[4] A. Batra, et al., Appl. Phys. Lett. 91, 193502 (2007)
[5] C. D. Weis, A. Schuh, A. Batra, A. Persaud, I. W. Rangelow, J. Bokor, C. C. Lo, S. Cabrini, E. Sideras-Haddad, G. D. Fuchs, R. Hanson, D. D. Awschalom, T. Schenkel, J. Vac. Sci. Techn. B 26, 2596 (2009), arXiv:0806.2167
